SK hynix DDR 非常适用于需要大的存储密度和高带宽的主存储器应用。
SK hynix DDR提供参考时钟的上升沿和下降沿完全同步操作。数据路径内部流水线和2位预取达到非常高的带宽。所有输入和输出电压电平兼容与SSTL_2。
以下是hynix DDR3 型号一览：
容量 ORG. 速度 型号 封装 特性 量产
512Mb 64MX8 DDR 400 H5DU5182ETR-E3C TSOPII(66pin) 4Bank,2.6V, 3-3-3 EOL
512Mb 64MX8 DDR 400 H5DU5182EFR-E3C FBGA(60ball) 4Bank,2.6V, 3-3-3 EOL
512Mb 64MX8 DDR 333 H5DU5182ETR-J3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
512Mb 64MX8 DDR 333 H5DU5182EFR-J3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
512Mb 64MX8 DDR 266 H5DU5182ETR-K3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
512Mb 64MX8 DDR 266 H5DU5182EFR-K3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
512Mb 32Mx16 DDR 400 H5DU5162ETR-E3C TSOPII(66pin) 4Bank,2.6V, 3-3-3 EOL
512Mb 32Mx16 DDR 400 H5DU5162EFR-E3C FBGA(60ball) 4Bank,2.6V, 3-3-3 EOL
512Mb 32Mx16 DDR 333 H5DU5162ETR-J3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
512Mb 32Mx16 DDR 333 H5DU5162EFR-J3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
512Mb 32Mx16 DDR 266 H5DU5162ETR-K3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
512Mb 32Mx16 DDR 266 H5DU5162EFR-K3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
256Mb 32Mx8 DDR 400 H5DU2582GTR-E3C TSOPII(66pin) 4Bank, 2.5V, 3-3-3 EOL
256Mb 32Mx8 DDR 333 H5DU2582GTR-J3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
256Mb 32Mx8 DDR 266 H5DU2582GTR-K3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
256Mb 16Mx16 DDR 500 H5DU2562GTR-FAC TSOPII(66pin) 4Bank, 2.5V, 4-4-4 EOL
256Mb 16Mx16 DDR 400 H5DU2562GTR-E3C TSOPII(66pin) 4Bank, 2.5V, 3-3-3 EOL
256Mb 16Mx16 DDR 400 H5DU2562GFR-E3C FBGA(60ball) 4Bank, 2.5V, 3-3-3 EOL
256Mb 16Mx16 DDR 333 H5DU2562GTR-J3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
256Mb 16Mx16 DDR 333 H5DU2562GFR-J3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
256Mb 16Mx16 DDR 266 H5DU2562GTR-K3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
256Mb 16Mx16 DDR 266 H5DU2562GFR-K3C FBGA(60ball) 4Bank, 2.5V, CL2.5 EOL
128Mb 8Mx16 DDR 500 H5DU1262GTR-FBC TSOPII(66pin) 4Bank, 2.5V, 4-3-3 EOL
128Mb 8Mx16 DDR 400 H5DU1262GTR-E3C TSOPII(66pin) 4Bank, 2.5V, 3-3-3 EOL
128Mb 8Mx16 DDR 333 H5DU1262GTR-J3C TSOPII(66pin) 4Bank, 2.5V, CL2.5 EOL
